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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU1706AX DESCRIPTION *High Voltage *High Speed Switching APPLICATIONS *Designed for use in high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCESM VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 1750 750 12 5 8 3 5 32 150 -40~150 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0; L= 25mH IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125 VEB= 12V; IC= 0 IC= 5mA; VCE= 10V IC= 400mA; VCE= 3V IC= 1.5A; VCE= 1V 8 12 5 MIN 750 BU1706AX TYP. MAX UNIT V 1.0 1.3 1.0 2.0 1.0 V V mA mA 35 Switching Times Resistive Load ton ts tf Turn-On Time Storage Time Fall Time IC= 1.5A; IB1= -IB2= 0.3A 1.5 6.5 1.0 s s s isc Websitewww.iscsemi.cn |
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